Thermal simulation of excimer Laser fusion and recrystallization of amorphous silicon for thin film transistors

被引：0
|
作者：
deUnamuno, S [1 ]
Fogarassy, E [1 ]
机构：
[1] LAB PHASE,CNRS,F-67037 STRASBOURG,FRANCE
来源：
ANNALES DE PHYSIQUE | 1997年 / 22卷
关键词：
D O I：
10.1051/anphys/1997043
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：225 / 226
页数：2
相关论文
共 50 条
  • [1] Excimer-laser-produced amorphous-silicon vertical thin-film transistors
    Saitoh, A
    Matsumura, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (6A): : L668 - L669
  • [2] Recrystallization mechanism of amorphous silicon thin films upon excimer laser crystallization
    Kuo, Chil-Chyuan
    Yeh, Wen-Chang
    Hsiao, Chih-Ping
    Jeng, Jeng-Ywan
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (07): : 2023 - 2029
  • [3] Recrystallization mechanism of amorphous silicon thin films upon excimer laser crystallization
    Kuo, Chil-Chyuan
    Yeh, Wen-Chang
    Hsiao, Chih-Ping
    Jeng, Jeng-Ywan
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2007, 1 (01): : 25 - 30
  • [4] Modeling of Thermal Behavior in the Amorphous Silicon Thin Film Transistors
    Liu, Yuan
    En, Yunfei
    He, Yujuan
    Lei, Zhifeng
    PROCEEDINGS OF 2014 10TH INTERNATIONAL CONFERENCE ON RELIABILITY, MAINTAINABILITY AND SAFETY (ICRMS), VOLS I AND II, 2014, : 142 - 145
  • [5] Microcrystalline silicon and excimer laser crystallized silicon Thin Film Transistors on the same substratel
    Pier, T.
    Kandoussi, K.
    Simon, C.
    Coulon, N.
    Lhermite, H.
    Mohammed-Brahim, T.
    Bergamini, J. F.
    THIN SOLID FILMS, 2007, 515 (19) : 7585 - 7589
  • [6] Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors
    AlNuaimy, EA
    Marshall, JM
    APPLIED PHYSICS LETTERS, 1996, 69 (25) : 3857 - 3859
  • [7] Amorphous silicon thin film transistors
    Lin, Jyh-Ling, 1600, Chinese Inst of Engineers, Taipei, Taiwan (18):
  • [8] Modeling and simulation of hydrogenated amorphous silicon thin-film transistors
    Hafdi, Z., 1600, Japan Society of Applied Physics (44):
  • [9] Modeling and simulation of hydrogenated amorphous silicon thin-film transistors
    Hafdi, Z
    Aida, MS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (03): : 1192 - 1198
  • [10] Characteristics of Thin-Film Transistors Fabricated by the Excimer Laser-Annealed Amorphous Silicon in Ultralow Oxygen Concentrations
    Lee, Hong-Chan
    Kim, Kyoung-Bo
    Kim, Moojin
    JOURNAL OF NANO RESEARCH, 2017, 49 : 34 - 43
12345