Enhanced X-ray excited luminescence of Ga- and In-doped ZnO nanorods by hydrogen annealing

被引：13

作者：

Li, Qianli ^{[1
]}

Liu, Xiaolin ^{[1
]}

Gu, Mu ^{[1
]}

Huang, Shiming ^{[1
]}

Zhang, Juannan ^{[1
]}

Liu, Bo ^{[1
]}

Ni, Chen ^{[1
]}

Hu, Yahua ^{[1
]}

Zhao, Shuning ^{[1
]}

Wu, Qiang ^{[1
]}

机构：

[1] Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2017年 / 86卷

基金：

中国国家自然科学基金;

关键词：

ZnO nanorods; Ion doping; Hydrogen annealing; Photoluminescence; X-ray excited luminescence; OPTICAL-PROPERTIES; NANOWIRES; GROWTH; PASSIVATION;

D O I：

10.1016/j.materresbull.2016.10.027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Ga- and In-doped ZnO nanorods were prepared by hydrothermal method, and the effect of the hydrogen annealing on their morphology, structure and luminescence properties was investigated in detail. The results indicated that the annealing treatment resulted in the improvement of the surface roughness and the crystallization of the nanorods. Furthermore, the hydrogen-annealed nanorods exhibited a significant enhancement of the ultraviolet emission and simultaneous suppression of the visible emission under ultraviolet and X-ray excitation, as well as a sub-nanosecond fluorescence decay time. It means that these nanorods are expected to be promising candidates for applications in superfast and high-spatial-resolution X-ray imaging detectors. (C) 2016 Elsevier Ltd. All rights reserved.

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收藏

页码：173 / 177

页数：5

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