Enhanced dielectric and piezoelectric properties in lead-free Bi0.5Na0.5TiO3-BaTiO3-SrTiO3 thin films with seed layer

被引：17

作者：

Li, Wei ^{[1
,2
]}

Li, Peng ^{[1
]}

Zeng, Huarong ^{[3
]}

Hao, Jigong ^{[1
,2
]}

Zhai, Jiwei ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

[2] Liaocheng Univ, Coll Mat Sci & Engn, Liaocheng 252059, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2015年 / 41卷

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

Thin films; BNT-based; Dielectric; Piezoelectric; SOL-GEL METHOD;

D O I：

10.1016/j.ceramint.2015.03.178

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

0.755(Bi0.5Na0.5)TiO3-0.065BaTiO(3)-0.18SrTiO(3) (BNT-BT-ST) thin films were deposited on the Pt(111)/Ti/SiO2/Si substrates with seed layer. Extremely enhanced electrical properties exhibited in the BNT-BT-ST film with seed layer, such as large dielectric constant (630) and piezoelectric coefficient d(33) (140 pm/V) and low dielectric loss (0.032). The enhancement of electrical properties can be attributed to the seed layer, which offers nucleation site to reduce crystallization activation energy and facilitates polarization response. The seed layer also acts as a capacitive interface layer, which reduces the vacancy-type defects effectively. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：S356 / S360

页数：5

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