Dielectric function spectra at 40 K and critical-point energies for CuIn0.7Ga0.3Se2

被引：21

作者：

Choi, S. G. ^{[1
]}

Chen, R. ^{[2
]}

Persson, C. ^{[2
,3
]}

Kim, T. J. ^{[4
]}

Hwang, S. Y. ^{[4
]}

Kim, Y. D. ^{[4
]}

Mansfield, L. M. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden

[3] Univ Oslo, Dept Phys, NO-0316 Oslo, Norway

[4] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 26期

关键词：

INTERBAND CRITICAL-POINTS; TEMPERATURE-DEPENDENCE; SPECTROSCOPIC ELLIPSOMETRY; THIN-FILMS; ELECTRONIC-STRUCTURE; CUIN1-XGAXSE2; CUINSE2;

D O I：

10.1063/1.4773362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report ellipsometrically determined dielectric function e spectra for CuIn0.7Ga0.3Se2 thin film at 40 and 300 K. The data exhibit numerous spectral features associated with interband critical points (CPs) in the spectral range from 0.74 to 6.43 eV. The second-energy-derivatives of e further reveal a total of twelve above-bandgap CP features, whose energies are obtained accurately by a standard lineshape analysis. The e spectra determined by ellipsometry show a good agreement with the results of full-potential linearized augmented plane wave calculations. Probable electronic origins of the CP features observed are discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773362]

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