Effective control over near band-edge emission in ZnO/CuO multilayered films

被引：26

作者：

Allabergenov, Bunyod ^{[1
,2
]}

Shaislamov, Ulugbek ^{[3
]}

Shim, Hyunseok ^{[1
]}

Lee, Myeong-Jae ^{[1
]}

Matnazarov, Anvar ^{[2
]}

Choi, Byeongdae ^{[1
]}

机构：

[1] Daegu Gyeongbuk Inst Sci & Technol, Nano & Bio Res Div, 50-1 Sang Ri, Daegu 711873, South Korea

[2] Urgench State Univ USU, Dept Transport Syst, 14 Khamid Alimjon, Urgench 220100, Uzbekistan

[3] Jeju Natl Univ, Dept Adv Mat & Engn, 1 Arail Dong, Jeju Si, Jeju Do, South Korea

来源：

OPTICAL MATERIALS EXPRESS | 2017年 / 7卷 / 02期

关键词：

ZNO THIN-FILMS; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; MICROSTRUCTURES;

D O I：

10.1364/OME.7.000494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a study of the microstructural and photoluminescent properties of ZnO/CuO multilayered films. Multilayered ZnO/CuO thin films were deposited on amorphous SiO2/Si substrates by a pulsed laser technique and their microstructural and optical properties were characterized by transmission electron microscopy (TEM) and photoluminescence spectroscopy. TEM and XRD analyses of annealed ZnO/CuO films reveal the formation of multiple crystallographic defects and modification of the dominant growth plane, indicating effective doping of Cu atoms into the ZnO lattice. Consequently, near-band-edge emission in ZnO can be controlled through the number of CuO layers. Redshift of the near-band-edge emission peak from 385 nm up to 422 nm is achieved by increasing the number of CuO layers up to a certain number, above which a downward shift is observed. The results demonstrate that the emission properties of ZnO can be modified and precisely controlled by incorporation of CuO thin layers as a Cu-doping source. (C) 2017 Optical Society of America

引用

页码：494 / 502

页数：9

共 29 条

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Allabergenov B., 2012, ADV SINTERING SCI TE, P151

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