Enhanced power performance of enhancement-mode Al0.5Ga0.5As/In0.15Ga0.85As pHEMTs using a low-k BCB passivation

被引：23

作者：

Chiu, HC ^{[1
]}

Hwu, MJ ^{[1
]}

Yang, SC ^{[1
]}

Chan, YJ ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 05期

关键词：

BCB; enhancement-mode; low-k passivation; pHEMTs;

D O I：

10.1109/55.998864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface passivation technology plays an important role, especially in E-mode pHEMTs applications, and a new passivation technology has been proposed in this study. This novel benzocyclobutene (BCB) passivation layer takes advantages of the low dielectric permittivity (2.7) and a low loss tangent (0.0008). In this letter, we not only suppress the gate-to-drain leakage current but also improve the device power performance under a high input power swing by using a BCB passivation layer. The passivated 1.0 mum-long gate pHEMTs exhibit a better off-state performance than the unpassivated ones. The maximum output power under a 2.4-GHz operation is 118 mW/mm, with a linear power gain of 11.1 dB and a power-added efficiency is 60%.

引用

页码：243 / 245

页数：3

共 8 条

[1]

BITO Y, 1995, IEEE MTT S TECH DIG, P439

[2] Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching [J].