Controllable low-bias negative differential resistance and rectifying behaviors induced by symmetry breaking

被引:32
作者
Fan, Zhi-Qiang [1 ]
Zhang, Zhen-Hua [1 ]
Deng, Xiao-Qing [1 ]
Tang, Gui-Ping [1 ]
Chen, Ke-Qiu [2 ,3 ]
机构
[1] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China
[2] Hunan Univ, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China
[3] Hunan Univ, Key Lab Micronano Optoelect Devices, Minist Educ, Changsha 410082, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
DEVICE;
D O I
10.1063/1.4788691
中图分类号
O59 [应用物理学];
学科分类号
摘要
Incorporating the characteristic of pyramidal electrode and symmetry breaking of molecular structure, we theoretically design a molecular device to perform negative differential resistance and rectifying behaviors simultaneously. The calculated results reveal that low-bias negative differential resistance behaviors can appear symmetrically when tetraphenyl molecule connects to pyramidal gold electrodes. However, as one phenyl of tetraphenyl molecule is replaced by a pyrimidyl, the symmetry breaking on the molecule will break the symmetry of negative differential resistance behavior. The peak-to-valley ratio on negative bias region is larger than that on positive bias region to perform a low-bias rectifying behavior. More importantly, increasing the symmetry breaking can further weaken these two behaviors which propose an effective way to modulate them. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788691]
引用
收藏
页数:5
相关论文
共 43 条
[1]   High-efficiency switching effect in porphyrin-ethyne-benzene conjugates [J].
An, Yi-Peng ;
Yang, Zhongqin ;
Ratner, Mark A. .
JOURNAL OF CHEMICAL PHYSICS, 2011, 135 (04)
[2]   MOLECULAR RECTIFIERS [J].
AVIRAM, A ;
RATNER, MA .
CHEMICAL PHYSICS LETTERS, 1974, 29 (02) :277-283
[3]   DEMONSTRATION OF THE TUNNEL-DIODE EFFECT ON AN ATOMIC SCALE [J].
BEDROSSIAN, P ;
CHEN, DM ;
MORTENSEN, K ;
GOLOVCHENKO, JA .
NATURE, 1989, 342 (6247) :258-260
[4]   Density-functional method for nonequilibrium electron transport -: art. no. 165401 [J].
Brandbyge, M ;
Mozos, JL ;
Ordejón, P ;
Taylor, J ;
Stokbro, K .
PHYSICAL REVIEW B, 2002, 65 (16) :1654011-16540117
[5]   GENERALIZED MANY-CHANNEL CONDUCTANCE FORMULA WITH APPLICATION TO SMALL RINGS [J].
BUTTIKER, M ;
IMRY, Y ;
LANDAUER, R ;
PINHAS, S .
PHYSICAL REVIEW B, 1985, 31 (10) :6207-6215
[6]   Large on-off ratios and negative differential resistance in a molecular electronic device [J].
Chen, J ;
Reed, MA ;
Rawlett, AM ;
Tour, JM .
SCIENCE, 1999, 286 (5444) :1550-1552
[7]   A conjugated polymer pn junction [J].
Cheng, CHW ;
Lonergan, MC .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (34) :10536-10537
[8]   Effects of contact geometry on transport properties of a Si4 cluster -: art. no. 205408 [J].
Dai, ZX ;
Zheng, XH ;
Shi, XQ ;
Zeng, Z .
PHYSICAL REVIEW B, 2005, 72 (20)
[9]   Interface states, negative differential resistance, and rectification in molecular junctions with transition-metal contacts [J].
Dalgleish, Hugh ;
Kirczenow, George .
PHYSICAL REVIEW B, 2006, 73 (24)
[10]   Electrode conformation-induced negative differential resistance and rectifying performance in a molecular device [J].
Deng, X. Q. ;
Zhou, J. C. ;
Zhang, Z. H. ;
Zhang, H. ;
Qiu, M. ;
Tang, G. P. .
APPLIED PHYSICS LETTERS, 2009, 95 (16)