Accuracy of expressions for the fill factor of a solar cell in terms of open-circuit voltage and ideality factor

被引:47
作者
Leilaeioun, Mehdi [1 ]
Holman, Zachary C. [1 ]
机构
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
关键词
IRON-BORON PAIRS; CRYSTALLINE SILICON; LIMITING EFFICIENCY; RADIATIVE RECOMBINATION; LIFETIME SPECTROSCOPY; ELECTRONIC-PROPERTIES; DEPENDENCE; DESIGN; SYSTEM; MODEL;
D O I
10.1063/1.4962511
中图分类号
O59 [应用物理学];
学科分类号
摘要
An approximate expression proposed by Green predicts the maximum obtainable fill factor (FF) of a solar cell from its open-circuit voltage (V-oc). The expression was originally suggested for silicon solar cells that behave according to a single-diode model and, in addition to V-oc, it requires an ideality factor as input. It is now commonly applied to silicon cells by assuming a unity ideality factor-even when the cells are not in low injection-as well as to non-silicon cells. Here, we evaluate the accuracy of the expression in several cases. In particular, we calculate the recombination-limited FF and V-oc of hypothetical silicon solar cells from simulated lifetime curves, and compare the exact FF to that obtained with the approximate expression using assumed ideality factors. Considering cells with a variety of recombination mechanisms, wafer doping densities, and photogenerated current densities reveals the range of conditions under which the approximate expression can safely be used. We find that the expression is unable to predict FF generally: For a typical silicon solar cell under one-sun illumination, the error is approximately 6% absolute with an assumed ideality factor of 1. Use of the expression should thus be restricted to cells under very low or very high injection. Published by AIP Publishing.
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页数:10
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共 37 条
  • [21] A review and comparison of different methods to determine the series resistance of solar cells
    Pysch, D.
    Mette, A.
    Glunz, S. W.
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2007, 91 (18) : 1698 - 1706
  • [22] Electronic properties of interstitial iron and iron-boron pairs determined by means of advanced lifetime spectroscopy
    Rein, S
    Glunz, SW
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)
  • [23] Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions
    Rein, S
    Rehrl, T
    Warta, W
    Glunz, SW
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 2059 - 2070
  • [24] Fill factor limitation of silicon heterojunction solar cells by junction recombination
    Reusch, Markus
    Bivour, Martin
    Hermle, Martin
    Glunz, Stefan W.
    [J]. PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2013), 2013, 38 : 297 - 304
  • [25] Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells
    Richter, Armin
    Hermle, Martin
    Glunz, Stefan W.
    [J]. IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (04): : 1184 - 1191
  • [26] Improved quantitative description of Auger recombination in crystalline silicon
    Richter, Armin
    Glunz, Stefan W.
    Werner, Florian
    Schmidt, Jan
    Cuevas, Andres
    [J]. PHYSICAL REVIEW B, 2012, 86 (16)
  • [27] Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation
    Schenk, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) : 3684 - 3695
  • [28] Recombination activity of interstitial chromium and chromium-boron pairs in silicon
    Schmidt, Jan
    Krain, Rafael
    Bothe, Karsten
    Pensl, Gerhard
    Beljakowa, Svetlana
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)
  • [29] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
    SHOCKLEY, W
    READ, WT
    [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
  • [30] Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers
    Singh, Khomdram Jolson
    Sarkar, Subir Kumar
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2012, 43 (1-5) : 1 - 21