Accuracy of expressions for the fill factor of a solar cell in terms of open-circuit voltage and ideality factor

被引:47
作者
Leilaeioun, Mehdi [1 ]
Holman, Zachary C. [1 ]
机构
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
关键词
IRON-BORON PAIRS; CRYSTALLINE SILICON; LIMITING EFFICIENCY; RADIATIVE RECOMBINATION; LIFETIME SPECTROSCOPY; ELECTRONIC-PROPERTIES; DEPENDENCE; DESIGN; SYSTEM; MODEL;
D O I
10.1063/1.4962511
中图分类号
O59 [应用物理学];
学科分类号
摘要
An approximate expression proposed by Green predicts the maximum obtainable fill factor (FF) of a solar cell from its open-circuit voltage (V-oc). The expression was originally suggested for silicon solar cells that behave according to a single-diode model and, in addition to V-oc, it requires an ideality factor as input. It is now commonly applied to silicon cells by assuming a unity ideality factor-even when the cells are not in low injection-as well as to non-silicon cells. Here, we evaluate the accuracy of the expression in several cases. In particular, we calculate the recombination-limited FF and V-oc of hypothetical silicon solar cells from simulated lifetime curves, and compare the exact FF to that obtained with the approximate expression using assumed ideality factors. Considering cells with a variety of recombination mechanisms, wafer doping densities, and photogenerated current densities reveals the range of conditions under which the approximate expression can safely be used. We find that the expression is unable to predict FF generally: For a typical silicon solar cell under one-sun illumination, the error is approximately 6% absolute with an assumed ideality factor of 1. Use of the expression should thus be restricted to cells under very low or very high injection. Published by AIP Publishing.
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页数:10
相关论文
共 37 条
  • [1] Injection dependence of spontaneous radiative recombination in crystalline silicon: Experimental verification and theoretical analysis
    Altermatt, P. P.
    Geelhaar, F.
    Trupke, T.
    Dai, X.
    Neisser, A.
    Daub, E.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (26)
  • [2] [Anonymous], P 25 IEEE PVSC WASH
  • [3] Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements
    Birkholz, JE
    Bothe, K
    Macdonald, D
    Schmidt, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
  • [4] Boer K.W., 2012, Advances in solar energy: an annual review of research and development, V6
  • [5] De Wolf Stefaan, 2012, Green, V2, P7, DOI 10.1515/green-2011-0018
  • [6] >21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared
    Descoeudres, Antoine
    Holman, Zachary C.
    Barraud, Loris
    Morel, Sophie
    De Wolf, Stefaan
    Ballif, Christophe
    [J]. IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (01): : 83 - 89
  • [7] Tandem GaAsP/SiGe on Si solar cells
    Diaz, Martin
    Wang, Li
    Li, Dun
    Zhao, Xin
    Conrad, Brianna
    Soeriyadi, Anasasia
    Gerger, Andrew
    Lochtefeld, Anthony
    Ebert, Chris
    Opila, Robert
    Perez-Wurfl, Ivan
    Barnett, Allen
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 143 : 113 - 119
  • [8] Theoretical studies on the effect of a bithiophene bridge with different substituent groups (R = H, CH3, OCH3 and CN) in donor-π-acceptor copolymers for organic solar cell applications
    Fu, Zhiyong
    Shen, Wei
    He, Rongxing
    Liu, Xiaorui
    Sun, Huili
    Yin, Wanqiang
    Li, Ming
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (03) : 2043 - 2053
  • [9] Graff K., 2013, Metal impurities in silicon-device fabrication, V24
  • [10] Green MA, 1999, PROG PHOTOVOLTAICS, V7, P327, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<327::AID-PIP250>3.0.CO