Noise characteristics of AlInN/GaN HEMTs at microwave frequencies

被引：0
|
作者：
Nsele, S. D. [1 ]
Escotte, L. [1 ]
Tartarin, J. -G. [1 ]
Piotrowicz, S. [2 ]
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
[2] III V Lab, Marcoussis, France
来源：
2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2013年
关键词：
AlInN/GaN HEMTs; microwave noise parameters; ALGAN/GAN HEMTS; PERFORMANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The microwave noise parameters measured on AlInN/GaN HEMTs devices with different gate length values are presented in this paper. 0.15-mu m HEMTs achieve a maximum current density of 700 mA/mm at V-GS= 0 V and a measured extrinsic transconductance of 350 mS/mm The current gain cutoff frequency and the maximum oscillation frequency are 40 GHz and 70 GHz, respectively. At 10 (20) GHz, the device exhibits a minimum noise figure of 0.8 dB (1.8) dB with an associated power gain of 14 (8.8) dB. Below 8 GHz, the gate leakage current and a generation-recombination noise source with a very short time constant limit the noise performance.
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页数：4
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