Crystal growth and defect characterization of AIN single crystals

In this paper, we report results from seeded A1N PVT growth experiments carried out using (0001) carbon-face SiC seeds. The purpose of the experiments was to understand the morphology and crystalline quality of AlN thick films grown under the crystal growth environments investigated. AlN single crystal films of 100-650 mu m in thickness were grown and freestanding AlN single crystal pieces up to 4x5mm(2) were obtained. Surface morphologies and crystal defects in these AlN single crystals were studied using optical microscopy. Selected AN single crystals were studied using a high-resolution triple-axis X-ray diffraction technique and a Synchrotron White Beam X-ray Diffraction Topography technique. Defects identified in AlN crystals are cracks, grain boundaries and crystallite inclusions.