Room-temperature ferromagnetism observed in undoped semiconducting and insulating oxide thin films

被引：813
作者：
Hong, NH
Sakai, J
Poirot, N
Brizé, V
机构：
[1] Univ Tours, CNRS, CEA, UMR 6157,Lab LEMA, F-37200 Tours, France
[2] JAIST, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
[3] IUT Blois, F-41029 Blois, France
[4] Univ Tours, CNRS, CEA, Lab LEMA,UMR 6157, F-37200 Tours, France
来源：
PHYSICAL REVIEW B | 2006年 / 73卷 / 13期
关键词：
D O I：
10.1103/PhysRevB.73.132404
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Remarkable room-temperature ferromagnetism was observed in undoped TiO2, HfO2, and In2O3 thin films. The magnetic moment is rather modest in the case of In2O3 films on MgO substrates (while on Al2O3 substrates, it is negative showing diamagnetism) when the magnetic field was applied parallel to the film plane. In contrast, it is very large in the other two cases (about 20 and 30 emu/cm(3) for 200-nm-thick TiO2 and HfO2 films, respectively). Since bulk TiO2, HfO2, and In2O3 are clearly diamagnetic, and moreover, there are no contaminations in any substrate, we must assume that the thin film form, which might create necessary defects or oxygen vacancies, would be the reason for undoped semiconducting or insulating oxides to become ferromagnetic at room temperature.
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