RF operation of MOSFETs under integrated inductors

This paper presents an in-depth analysis of the operation of a CMOs single-chip three-dimensional inductor over a MOSFET structure at RF frequencies. Active circuitry is placed underneath the integrated inductors in order to take advantage of the vacant space. Measurements indicate that the operation of the MOSFET and of the inductor is affected in a predictable manner. The paper theoretically investigates the interaction between the two elements, analyzes the origin of all appearing effects and compares the theory with the experimental data from a typical CMOs process. Moreover, this study proposes possible applications and design guides and confirms the attractiveness of the inductor over MOSFET placement.