Extraction of VCSEL rate-equation parameters for low-bias system simulation

被引：31

作者：

Bruensteiner, M ^{[1
]}

Papen, GC ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1999年 / 5卷 / 03期

关键词：

characterization; low prebias operation; semiconductor laser; system modeling;

D O I：

10.1109/2944.788410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser diode rate-equation parameters are extracted for simulation of on-off keyed digital communication links with below-threshold laser prebiases. The extraction procedure uses measurements of the current-voltage-light characteristic, the ac small-signal response above threshold, and the turn-on delay due to an isolated pulse. Characteristics of the extracted models are discussed in detail. The predictive capability of the extracted models is demonstrated by good agreement between modeled and measured transient response pulse shapes for a prebias current of 0.3 times the threshold current.

引用

页码：487 / 494

页数：8

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