A Novel Hybrid Packaging Structure for High-Temperature SiC Power Modules

This paper presents a novel hybrid packaging structure for high-temperature SiC power modules that combines the benefits of the wirebond packaging structure and the planar packaging structure. With the proposed hybrid structure, the power modules can achieve the same footprint and similar parasitic to planar structures but with a much easier fabrication process and more reliable top-side interconnections. Meanwhile, no double-side solderable devices are required. The new structure and its fabrication process are presented, and a prototype module is built based on an SiC JFET. Detailed comparisons are also conducted between the hybrid, planar, and wirebond structures. The results reveal better performances of the hybrid structure in smaller parasitic, lower switching loss, and more flexible routing than the wirebond structure and easier fabrication, more reliable top-side connection, and more flexible die attachment material selection than the planar structure. A three-phase multiple-chip SiC JFET hybrid-structure power module is built and tested with 250 degrees C junction temperature for verification.