Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS2

被引：14

作者：

Leonhardt, Alessandra ^{[1
,2
]}

de la Rosa, Cesar Javier Lockhart ^{[2
]}

Nuytten, Thomas ^{[2
]}

Banszerus, Luca ^{[4
]}

Sergeant, Stefanie ^{[2
]}

Mootheri, Vivek K. ^{[2
,3
]}

Taniguchi, Takashi ^{[5
]}

Watanabe, Kenji ^{[5
]}

Stampfer, Christoph ^{[4
]}

Huyghebaert, Cedric ^{[2
]}

De Gendt, Stefan ^{[1
,2
]}

机构：

[1] Katholieke Univ Leuven, Dept Chem, Celestijnenlaan 200F,2404, B-3001 Leuven, Belgium

[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Dept Mat MTM, Kasteelpk Arenberg 44,2450, B-3001 Leuven, Belgium

[4] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Germany, Germany

[5] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

ADVANCED MATERIALS INTERFACES | 2020年 / 7卷 / 18期

基金：

欧盟地平线“2020”;

关键词：

characterization; hBN; interfaces; MoS2; photoluminescence; traps; EXCITON DYNAMICS; MONOLAYER MOS2; MONO LAYER; GRAPHENE; RECOMBINATION; HETEROSTRUCTURES;

D O I：

10.1002/admi.202000413

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Defect characterization of 2D materials is a critical aspect for their successful integration in future electronic devices. Here, a simple characterization technique is proposed that opens a path for fast, non-invasive, quality assessment of transition metal dichalcogenide layers, such as MoS2, and their interfaces. It relates to the correlation between substrate-induced traps and the indirect-to-direct photoluminescence peak ratio. It is shown that the indirect peak is quenched when interfacial trap sites are present. A physical mechanism is proposed to explain the observations based on different recombination mechanisms.

引用

页数：8

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