Robustness enhancement for subsequent plasma damages utilizing surface modification layer induced by He plasma

被引：0

作者：

Yanai, K ^{[1
]}

Hasebe, T ^{[1
]}

Sumiya, K ^{[1
]}

Oguni, S ^{[1
]}

Koga, K ^{[1
]}

机构：

[1] CASMAT, Tokyo 1850014, Japan

来源：

Advanced Metallization Conference 2005 (AMC 2005) | 2006年

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Surface modification of low-k dielectrics (carbon-doped silicon oxide) induced by He plasma was investigated. Differential Fourier transform infrared absorption spectroscopy and evaluations of etch depth after immersion in mixed hydrofluoric acid indicated that almost all of the Si-CH3 bonds in the modified layers were broken, resulting in carbon depletion and producing an SiO2-like composition. X-ray photoelectron spectroscopy at different take-off angles showed that the modified surface had a double-layered structure consisting of a thin carbon-rich top layer (about 1 nm thick) on a thick carbon-depleted layer (about 20 nm thick) after irradiation with He plasma at over 300 W. These surface modifications greatly improved the robustness of the material against subsequent damage from exposure to other plasma such as N2O plasma.

引用

页码：341 / 346

页数：6