InP/ZnS/ZnS Core/Shell Blue Quantum Dots for Efficient Light-Emitting Diodes

被引：147

作者：

Zhang, Wenda ^{[1
,2
,3
]}

Ding, Shihao ^{[1
]}

Zhuang, Weidong ^{[2
,3
]}

Wu, Dan ^{[1
,4
]}

Liu, Pai ^{[1
]}

Qu, Xiangwei ^{[1
]}

Liu, Haochen ^{[1
]}

Yang, Hongcheng ^{[5
]}

Wu, Zhenghui ^{[1
]}

Wang, Kai ^{[1
]}

Sun, Xiao Wei ^{[1
,5
]}

机构：

[1] Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Dept Elect & Elect Engn, Guangdong Univ,Key Lab Adv Quantum Dot Displays &, Shenzhen 518055, Peoples R China

[2] Gen Res Inst Nonferrous Met, Natl Engn Res Ctr Rare Earth Mat, Beijing 100088, Peoples R China

[3] Grirem Adv Mat Co Ltd, Beijing 100088, Peoples R China

[4] Southern Univ Sci & Technol, Acad Adv Interdisciplinary Studies, Shenzhen 518055, Peoples R China

[5] Shenzhen Planck Innovat Technol Ltd, Shenzhen 518116, Peoples R China

来源：

ADVANCED FUNCTIONAL MATERIALS | 2020年 / 30卷 / 49期

基金：

国家教育部博士点专项基金资助; 中国国家自然科学基金;

关键词：

blue; InP; QLED; quantum dots; INDIUM-PHOSPHIDE; SURFACE-CHEMISTRY; NANOCRYSTALS;

D O I：

10.1002/adfm.202005303

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

As the concerns about using cadmium-based quantum dots (QDs) in display are growing worldwide, InP QDs have drawn much attention in quantum dot light-emitting diodes (QLEDs). However, pure blue InP based QLED has been rarely reported. In this work, first of all, pure blue InP/ZnS QDs with emission wavelength of 468 nm and quantum yield of 45% are synthesized. Furthermore, zinc oleate and S-TOP are used as precursors to epitaxially grow the second ZnS shell. The residual zinc stearate reacted with S-TOP to form ZnS shell, which increased the thickness and stability of QDs. Moreover, as the residual precursor of zinc stearate is removed, the current density increased from 13 mA cm(-2)to 121 mA cm(-2)at 8 V for the hole only device. External quantum efficiency increased from 0.6% of InP/ZnS QLED to 1.7% of InP/ZnS/ZnS QLED.

引用

页数：9

共 34 条

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