On the Potential of IGCTs in HVDC

被引：48

作者：

Ladoux, Philippe ^{[1
]}

Serbia, Nicola ^{[1
]}

Carroll, Eric I. ^{[2
]}

机构：

[1] Ecole Normale Super Elect Electrotech Informat H, Lab Plasma & Convers Energie, F-31000 Toulouse, France

[2] EIC Consultancy, F-34980 Montferrier Sur Lez, France

来源：

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS | 2015年 / 3卷 / 03期

关键词：

AC-DC power converters; HVDC transmission; modular multilevel converter (MMC); power semiconductor devices; thermal analysis; TECHNOLOGIES; VSC;

D O I：

10.1109/JESTPE.2015.2429116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In today's voltage source converter HVDC solutions, insulated-gate bipolar transistors (IGBTs) are used exclusively, generally in module form where the modular multilevel converter is concerned; this entails a number of protective measures that increase complexity and cost. As we move to higher transmitted powers, the use of integrated gate-commutated thyristors (IGCTs) would allow both higher voltages and currents while simultaneously reducing losses, failure rates, and costs, as this paper tries to demonstrate by comparing current production IGCTs with both current module and press-pack IGBTs.

引用

页码：780 / 793

页数：14

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