Effect of interface plasma treatments on the electrical properties of a-Si:H TFTs

被引：0

作者：

Wu, Chuan-Yi ^{[1
]}

Ma, Chia-Hsuan ^{[1
]}

机构：

[1] Chunghwa Picture Tubes Ltd, Tao Yuan 334, Taiwan

来源：

IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | 2005年

关键词：

gate insulator; interface plasma treatment; PECVD; taguchi method;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high stability of a-Si:H TFTs device is made of silicon nitride as dielectric are submitted to the different plasma treatments of the semiconductor/insulator interface by PECVD. The process parameters of plasma gas type, gas flow rate, RF power, and treatment time of interface treatment are taken into account and analyzed by Taguchi experimental design method. Results show the gas type is the major factor that affect the threshold voltage and mobility of a-Si:H TFTs device. In the future, the stressing experiments by using different stressing time with various stressing temperature are used to evaluate the performance of devices.

引用

页码：1085 / 1088

页数：4

共 6 条

[1] Properties of hydrogenated amorphous silicon thin film transistors fabricated at 150°C [J].