High-Power AlGaInAs Mode-Locked DBR Laser With Integrated Tapered Optical Amplifier

被引：3

作者：

Akbar, Jehan ^{[1
]}

Hou, Lianping ^{[1
]}

Haji, Mohsin ^{[1
]}

Strain, Michael J. ^{[1
]}

Marsh, John H. ^{[1
]}

Bryce, A. Catrina ^{[1
]}

Kelly, Anthony E. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

AlGaInAs; mode-locked laser; optical pulse generation; semiconductor optical amplifier; SEMICONDUCTOR-LASERS; LOW-JITTER; MW;

D O I：

10.1109/LPT.2012.2231858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 mu m. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of > 1.2 W is achieved.

引用

页码：253 / 256

页数：4

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