Small signal analysis of quantum-well BARITT diodes based on silicon carbide

被引：0

作者：

Aroutiounian, VM ^{[1
]}

Buniatyan, VV ^{[1
]}

Soukiassian, P ^{[1
]}

机构：

[1] Yerevan State Univ, Yerevan 375049, Armenia

来源：

MULTIFREQUENCY ELECTRONIC/PHOTONIC DEVICES AND SYSTEMS FOR DUAL-USE APPLICATIONS | 2001年 / 4490卷

关键词：

quantum well; barrier injection; transit-time diode; silicon carbide; negative dynamic resistance;

D O I：

10.1117/12.455421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Impedance characteristics of semiconductor barrier-injection transit-time diodes (BARITT) structures made of Silicon Carbide containing quantum wells in the drift region are theoretically examined. It is shown that the magnitude of the negative dynamic resistance can be increased due to trapping and escape effects of injected charge carriers in quantum wells. It is shown that the negative resistance of the BARITT structure made of different polytypes of SiC is one order of magnitude higher in absolute value in comparison with the Si structure, all other factors being equal. In the proposed structure significantly higher operation frequencies can be realized in comparison with usual BARITT's.

引用

页码：160 / 167

页数：8

共 37 条

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