Temperature-dependent integral exciton absorption in semiconducting GaAs crystals

被引：4

作者：

Vaganov, S. A. ^{[1
]}

Seisyan, R. P. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2012年 / 38卷 / 10期

关键词：

ALLOYS;

D O I：

10.1134/S1063785012100136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This Letter is devoted to an experimental investigation of the temperature dependence of the fundamental absorption edge of thin GaAs layers grown by molecular beam epitaxy. Critical temperature T (cr) = 135 K, above which the integral absorption becomes constant, corresponding values of critical damping parameter Gamma (c) = 0.248 meV, and longitudinal-transverse splitting (h) over bar omega(LT) = 0.082 meV are determined experimentally. The temperature dependence of the true dissipative damping is separated.

引用

页码：873 / 875

页数：3

共 13 条

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