Addenda to photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon

被引：0
作者：
Lue, HT
Tseng, CY
Lue, JT
机构：
[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30043, Taiwan
[2] Natl Chao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2002年 / 73卷 / 2-3期
关键词：
photoluminescence; electron paramagnetic resonance; porous silicon;
D O I：
10.1016/S0254-0584(01)00366-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This work includes addenda to the paper entitled photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon (PS) which was published in this journal. The readers can readily obtain the principal values of g(parallel to) and g(perpendicular to) from the de-convolution of the effective principal g-values of the spin resonance data measured at various rotating angles of the magnetic field and the crystal axes. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：310 / 313
页数：4
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