Recent advances in Ge/Si PIN and APD photodetectors

被引：9

作者：

Bowers, John E. ^{[1
]}

Ramaswamy, Anand ^{[1
]}

Dai, Daoxin ^{[1
]}

Zaoui, Wissem Sfar ^{[1
]}

Kang, Yimin ^{[2
]}

Yin, Tao ^{[2
]}

Morse, Mike ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10 | 2010年 / 7卷 / 10期

关键词：

Ge/Si; photodetectors; p-i-n junctions; design; performance; GAIN-BANDWIDTH-PRODUCT; AVALANCHE PHOTODIODES; FREQUENCY-RESPONSE; ENHANCEMENT; GHZ;

D O I：

10.1002/pssc.200983875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photodetectors on a Si platform are important because of the opportunity to manufacture literally millions of photodetectors per wafer and because the use of a mature CMOS (Complementary Metal-Oxide-Semiconductor) process results in low cost and high uniformity. In this paper, we review recent results on Ge-Si-based PIN-type photodetectors and avalanche photodetectors (APD). We show several exciting advantages of SiGe photodetectors namely, the higher thermal conductivity of Si and Ge, resulting in higher power capability, and the lower k factor, resulting in higher gain bandwidth products in APDs. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2526 / 2531

页数：6

共 16 条

[1] Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes [J].

Dai, Daoxin ;

Chen, Hui-Wen ;

Bowers, John E. ;

Kang, Yimin ;

Morse, Mike ;

Paniccia, Mario J. .

OPTICS EXPRESS, 2009, 17 (19) :16549-16557

[2] AVALANCHE-PHOTODIODE FREQUENCY RESPONSE [J].

EMMONS, RB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3705-+

[3] Silicon heterointerface photodetector [J].

Hawkins, AR ;

Reynolds, TE ;

England, DR ;

Babic, DI ;

Mondry, MJ ;

Streubel, K ;

Bowers, JE .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3692-3694

[4] Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product [J].

Kang, Yimin ;

Liu, Han-Din ;

Morse, Mike ;

Paniccia, Mario J. ;

Zadka, Moshe ;

Litski, Stas ;

Sarid, Gadi ;

Pauchard, Alexandre ;

Kuo, Ying-Hao ;

Chen, Hui-Wen ;

Zaoui, Wissem Sfar ;

Bowers, John E. ;

Beling, Andreas ;

McIntosh, Dion C. ;

Zheng, Xiaoguang ;

Campbell, Joe C. .

NATURE PHOTONICS, 2009, 3 (01) :59-63

[5] Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector [J].

Kim, G ;

Kim, IG ;

Baek, JH ;

Kwon, OK .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1249-1251

[6] Germanium-on-SOI infrared detectors for integrated photonic applications [J].

Koester, Steven J. ;

Schaub, Jeremy D. ;

Dehlinger, Gabriel ;

Chu, Jack O. .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2006, 12 (06) :1489-1502

[7] Equivalent circuit model for Si avalanche photodetectors fabricated in standard CMOS process [J].

Lee, Myung-Jae ;

Kang, Hyo-Soon ;

Choi, Woo-Young .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (10) :1115-1117

[8]

Ramaswamy A., 2009, MICR PHOT C

[9]

Ramaswamy A., 2009, 6 INT C GROUP 4 PHOT

[10]

Ramaswamy A., 2009, LEOS

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