Microstructural characterisation of Bi2Se3 thin films

被引：5

作者：

Tarakina, N. V. ^{[1
]}

Schreyeck, S. ^{[1
]}

Borzenko, T. ^{[1
]}

Grauer, S. ^{[1
]}

Schumacher, C. ^{[1
]}

Karczewski, G. ^{[1
]}

Gould, C. ^{[1
]}

Brunner, K. ^{[1
]}

Buhmann, H. ^{[1
]}

Molenkamp, L. W. ^{[1
]}

机构：

[1] Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany

来源：

18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII) | 2013年 / 471卷

关键词：

GROWTH;

D O I：

10.1088/1742-6596/471/1/012043

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The microstructure of Bi2Se3 thin films grown by molecular beam epitaxy on Si(111), InP(111)B and Fe-doped InP(111)B substrates has been studied in detail using scanning transmission electron microscopy. Films grown on Si(111) and InP(111)B substrates show the formation of twin domains: rotation twins (with the grain boundary perpendicular to the substrate) and lamellar twins (with the grain boundary parallel to the substrate). The presence of twins was confirmed by atomic-force microscopy (AFM) and X-ray diffraction (XRD). At the interface between Bi2Se3 film and Si(111) or InP(111)B substrates poorly crystallized layers of about 1 nm and 1.8 nm thickness, respectively, followed by well-crystallized Bi2Se3 layers, were found. The use of a Fe-doped InP (111) substrate with a rough surface enables the suppression of twin formation.

引用

页数：4

共 50 条

[21] Effect of Major Factors on the Composition of Thin Bi2Se3 Films
V. A. Majidzade
S. P. Javadova
A. Sh. Aliyev
D. B. Tagiyev
Russian Journal of Applied Chemistry, 2021, 94 : 38 - 42
[22] Determination of kinetic parameters of Bi2Se3 thin films by computation
Nataraj, D
Prabakar, K
Narayandass, SK
Mangalaraj, D
CRYSTAL RESEARCH AND TECHNOLOGY, 2000, 35 (09) : 1087 - 1094
[23] A CHEMICAL METHOD FOR THE DEPOSITION OF THIN-FILMS OF BI2SE3
PRAMANIK, P
BHATTACHARYA, RN
MONDAL, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1857 - 1858
[24] The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films
Wang, Mei-Xiao
Liu, Canhua
Xu, Jin-Peng
Yang, Fang
Miao, Lin
Yao, Meng-Yu
Gao, C. L.
Shen, Chenyi
Ma, Xucun
Chen, X.
Xu, Zhu-An
Liu, Ying
Zhang, Shou-Cheng
Qian, Dong
Jia, Jin-Feng
Xue, Qi-Kun
SCIENCE, 2012, 336 (6077) : 52 - 55
[25] RADIAL DISTRIBUTION ANALYSIS STUDIES OF Bi2Se3 THIN FILMS
Ojha, N. N.
Sharma, J. P.
Kumar, A.
CHALCOGENIDE LETTERS, 2014, 11 (06): : 281 - 285
[26] Size effect in the electronic transport of thin films of Bi2Se3
Marchenkov, V. V.
Chistyakov, V. V.
Huang, J. C. A.
Perevozchikova, Y. A.
Domozhirova, A. N.
Eisterer, M.
MOSCOW INTERNATIONAL SYMPOSIUM ON MAGNETISM (MISM 2017), 2018, 185
[27] Morphological Tuning of Bi2Se3 Thin Films for Photoelectrochemical Performance
Desai, Neha D.
Patil, Vithoba L.
Patil, Satish S.
Patil, Pramod S.
Bhosale, Popatrao N.
CHEMISTRYSELECT, 2022, 7 (44):
[28] Effect of Major Factors on the Composition of Thin Bi2Se3 Films
Majidzade, V. A.
Javadova, S. P.
Aliyev, A. Sh.
Tagiyev, D. B.
RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 2021, 94 (01) : 38 - 42
[29] Effect of electrolyte on the growth of thermoelectric Bi2Se3 thin films
Tumelero, Milton A.
Martins, Mauro B.
Souza, Paloma B.
Della Pace, Rafael D.
Pasa, Andre A.
ELECTROCHIMICA ACTA, 2019, 300 : 357 - 362
[30] Chern number of thin films of the topological insulator Bi2Se3
Li, Huichao
Sheng, L.
Sheng, D. N.
Xing, D. Y.
PHYSICAL REVIEW B, 2010, 82 (16):

← 1 2 3 4 5 →