On the Crossing-Point of 4H-SiC Power Diodes Characteristics

被引：18

作者：

Di Benedetto, Luigi ^{[1
]}

Licciardo, Gian Domenico ^{[1
]}

Nipoti, Roberta ^{[2
]}

Bellone, Salvatore ^{[1
]}

机构：

[1] Univ Salerno, Dept Ind Engn, I-84084 Fisciano, Italy

[2] Italian Natl Res Council, Inst Microelect & MIcrosyst, I-40129 Bologna, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 02期

关键词：

Diodes; semiconductor device modeling; 4H-polytype of silicon carbide (4H-SiC); ion implantation;

D O I：

10.1109/LED.2013.2294078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The presence of crossing points in the forward J(D)-V-D curves of 4H-SiC pin diodes is analyzed by means of numerical and analytical models. The analysis allows one to justify the different temperature coefficients reported in the literature for SiC diodes and the interlacing behavior of their J(D)-V-D curves. A simple formula for predicting the position of the crossing-point is proposed.

引用

页码：244 / 246

页数：3

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