Detector structures based on epitaxial gallium arsenide compensated by chromium

被引：0

作者：

Vilisova, MD ^{[1
]}

Tolbanov, OP ^{[1
]}

Mokeev, DY ^{[1
]}

Drugova, EP ^{[1
]}

Chubirko, VA ^{[1
]}

Porokhovnichenko, LP ^{[1
]}

Ponomarev, IV ^{[1
]}

机构：

[1] Siberian Physicotech Inst, Tomsk, Russia

来源：

SIBCON-2005: IEEE International Siberian Conference on Control and Communications | 2005年

关键词：

GaAs; detector; charge collection efficiency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detector structures based on WE GaAs layers, compensated by Cr at diffusion process, have been studied at present article. Detectors were with active region both n-type and n-type. It was shown, that at structures based on n-type layers width of space charge region depends on applied reverse bias. And charge collection efficiency from a-particles Increased with bias. In structures based on pi-type layers such dependence is particulary absent and charge collection efficiency is not changed. Both types of structures has high charge collection efficiency from gamma-irradiation. At applied bias In structures based on n-type layers at the process of charge collection takes part not only electrons but also holes.

引用

页码：107 / 110

页数：4