A 1680-V (at 1 mA/cm2) 54-a (at 780 W/cm2) normally ON4H-SiC JFET with 0.143-cm2 active area

A high-voltage normally ON 4H-SiC vertical junction field-effect transistor (VJFET) of 0.143-cm(2) active area was manufactured in seven photolithographic levels with no epitaxial regrowth and with a single masked ion-implantation event. The VJFET exhibits low gate-to-source p-n-junction leakage current with relatively sharp onset of breakdown. At a drain-current density of 1 mA/cm(2), the VJFET blocks 1680 V at a gate bias of -24 V. A self-aligned floating guard-ring structure provides edge termination that blocks 77% of the 11.8-mu m SiC drift layer's limit. At a gate bias of 2.5 V and a corresponding gate current of 2 mA, the VJFET outputs 53.6 A (375 A/cm(2)) at a forward drain voltage drop of 2.08 V (780 W/cm(2)). The transistor current gain is I-D/I-G = 26 800, and the specific ON-state resistance is 5.5 m Omega . cm(2). To our best knowledge, this is the largest area SiC vertical-channel JFET reported to date and outputs more drain current than any 1200-V class vertical-channel JFET under identical heat-load and gate biasing conditions.