Traveling wave modeling of semiconductor ring lasers

被引：1
作者：
Radziunas, Mindaugas [1 ]
机构：
[1] Weierstrass Inst Angew Anal & Stochast, D-10117 Berlin, Germany
来源：
SEMICONDUCTOR LASERS AND LASER DYNAMICS III | 2008年 / 6997卷
关键词：
semiconductor ring laser; traveling wave model; switching; alternate oscillations; bistability; unidirectional; optical modes; analysis;
D O I：
10.1117/12.781354
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We use the traveling wave model for simulating and analyzing nonlinear dynamics of complex semiconductor ring laser devices. This modeling allows to consider temporal-spatial distributions of the counter-propagating slowly varying optical fields and the carriers, what can be important when studying non-homogeneous ring cavities, propagation of short pulses or fast switching. By performing numerical integration of the model equations we observe several dynamic regimes as well as transitions between them. The computation of ring cavity modes explains some peculiarities of these regimes.
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页数：9
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