Stable photovoltaic cells based on graphene oxide/indium zinc oxide bilayer anode buffer

被引:11
|
作者
Kim, Hyeong Pil [1 ,2 ]
Yusoff, Abd. Rashid bin Mohd [1 ,2 ]
Ryu, Mi Sun [3 ]
Jang, Jin [1 ,2 ]
机构
[1] Kyung Hee Univ, Dept Informat Display, Seoul 130171, South Korea
[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130171, South Korea
[3] TAKOMA Technol Co Ltd, Nonsan 320922, Chungnam, South Korea
关键词
Organic solar cells; Solution processed; Graphene oxide; Indium zinc oxide; ORGANIC SOLAR-CELLS; THIN-FILMS; STABILITY; POLYMER; DEVICES; LAYER;
D O I
10.1016/j.orgel.2012.09.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a solution-processed graphene oxide (GO) functioned as an anode buffer layer in organic photovoltaic cells (OPVs). The OPVs using indium zinc oxide (IZO), IZO/GO, GO/IZO, and poly(3,4-thylenedioxythiophene) doped poly(styrene sulfonate) (PEDOT:PSS) as a control device, exhibited the conversion efficiency of 3.4%, 3.5%, 3.9% and 3.4%, respectively. No obvious degradation was discovered for the OPVs with incorporating GO as one of the anode buffer layers after 1 h continuous illumination under AM1.5. On the other hand, after only 1 h continuous illumination, a momentous degradation was observed for the OPVs without the presence of GO. All these results demonstrate that the GO layer plays an important role in the improvement of the stability with conventional device architecture. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:3195 / 3202
页数:8
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