The Raman and infrared spectra depend on oxidation in nanometer silicon powder

被引：3

作者：

Zuo, J ^{[1
]}

Jia, JH

Xu, CY

机构：

[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China

[2] Acad Sinica, Inst Solid State Phys, Hefei 230026, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 6A期

关键词：

Raman spectroscopy; infrared spectroscopy; oxidation; nanometer silicon powder;

D O I：

10.1143/JJAP.38.3548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanometer silicon powder of 10 nm scale have been prepared by laser induced chemical vapor deposition. The Raman and infrared (IR) spectra of the nanometer silicon powder annealed at different temperature have been measured. The observed shifts in the Raman spectra are ascribed to the reduction of the silicon crystallite size by the oxidation of the surface in annealing process.

引用

页码：3548 / 3549

页数：2

共 8 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] In situ infrared characterisation of the interfacial oxide during the anodic dissolution of a silicon electrode in fluoride electrolytes [J].

daFonseca, C ;

Ozanam, F ;

Chazalviel, JN .

SURFACE SCIENCE, 1996, 365 (01) :1-14

[3] 3-DIMENSIONAL QUANTUM WELL EFFECTS IN ULTRAFINE SILICON PARTICLES [J].

FURUKAWA, S ;

MIYASATO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2207-L2209

[4] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].

LEHMANN, V ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858

[5] THE ONE PHONON RAMAN-SPECTRUM IN MICROCRYSTALLINE SILICON [J].

RICHTER, H ;

WANG, ZP ;

LEY, L .

SOLID STATE COMMUNICATIONS, 1981, 39 (05) :625-629

[6] EFFECTS OF THE NEAREST NEIGHBORS AND THE ALLOY MATRIX ON SIH STRETCHING VIBRATIONS IN THE AMORPHOUS SIOR-H (0-LESS-THAN-R-LESS-THAN-2) ALLOY SYSTEM [J].

TSU, DV ;

LUCOVSKY, G ;

DAVIDSON, BN .

PHYSICAL REVIEW B, 1989, 40 (03) :1795-1805

[7] LIGHT-EMISSION FROM THERMALLY OXIDIZED SILICON NANOPARTICLES [J].

ZHANG, D ;

KOLBAS, RM ;

MILEWSKI, PD ;

LICHTENWALNER, DJ ;

KINGON, AI ;

ZAVADA, JM .

APPLIED PHYSICS LETTERS, 1994, 65 (21) :2684-2686

[8] Raman shifts in Si nanocrystals [J].

Zi, J ;

Buscher, H ;

Falter, C ;

Ludwig, W ;

Zhang, KM ;

Xie, XD .

APPLIED PHYSICS LETTERS, 1996, 69 (02) :200-202

← 1 →