N-Type Colloidal-Quantum-Dot Solids for Photovoltaics

被引：184

作者：

Zhitomirsky, David ^{[1
]}

Furukawa, Melissa ^{[1
]}

Tang, Jiang ^{[2
]}

Stadler, Philipp ^{[1
]}

Hoogland, Sjoerd ^{[1
]}

Voznyy, Oleksandr ^{[1
]}

Liu, Huan ^{[3
]}

Sargent, Edward H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China

[3] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Hubei, Peoples R China

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 46期

基金：

加拿大自然科学与工程研究理事会;

关键词：

n-type materials; doping; PbS; colloidal quantum dots; photovoltaics; SOLAR-CELLS; PBS; PBTE;

D O I：

10.1002/adma.201202825

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm(2) V-1 s(-1). The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 10(18) cm(-3) is varied systematically.

引用

页码：6181 / 6185

页数：5

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