A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

被引：8

作者：

See, A. M. ^{[1
]}

Klochan, O. ^{[1
]}

Micolich, P. ^{[1
]}

Aagesen, M. ^{[2
]}

Lindelof, P. E. ^{[2
]}

Hamilton, A. R. ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen, Denmark

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2013年 / 25卷 / 50期

基金：

澳大利亚研究理事会;

关键词：

COULOMB-BLOCKADE OSCILLATIONS; FIELD-EFFECT TRANSISTORS; CONDUCTANCE; STATES;

D O I：

10.1088/0953-8984/25/50/505302

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot.

引用

页数：5

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