Effect of tungsten doping in bismuth-layered Na0.5Bi2.5Nb2O9 high temperature piezoceramics

被引:51
作者
Zhou, Zhiyong [1 ]
Li, Yuchen [1 ]
Hui, Shipeng [1 ]
Dong, Xianlin [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金;
关键词
FERROELECTRIC CERAMICS; ELECTRICAL-PROPERTIES; STRUCTURED FERROELECTRICS; PIEZOELECTRIC PROPERTIES; CRYSTAL-CHEMISTRY; SOLID-SOLUTION; BI4TI3O12; MICROSTRUCTURE; CONDUCTIVITY; BI3TINBO9;
D O I
10.1063/1.4861460
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of W6+ doping for B site on the structural and electrical properties of Na0.5Bi2.5Nb2O9-based ceramics were studied. It shows a trend of preferable orientation growth along c-axis and the Curie point (T-c) decreases slightly from 792 to 761 degrees C with the increasing W6+ amount. The electrical resistivity of Na0.5Bi2.5Nb2O9-based ceramics increases as much as about two orders of magnitude and the piezoelectric constant d(33) is significantly improved from 10.5 to 21.8 pC/N by W6+ modification. The composition of Na0.5Bi2.5Nb1.99W0.01O9 with a high T-c (792 degrees C), very good temperature stability up to similar to 0.96T(c), a large d(33) of 17.9 pC/N and sufficient high resistivity, is an excellent candidate for high temperature piezoelectric applications. (C) 2014 AIP Publishing LLC.
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页数:4
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