Low-Vt TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions

被引：5

作者：

Lin, S. H. ^{[1
]}

Liu, S. L. ^{[2
]}

Yeh, F. S. ^{[1
]}

Chin, Albert ^{[2
,3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Nanoelect Consortium Taiwan, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 01期

关键词：

HfLaO; low V-t; solid-phase diffusion (SPD); SILICIDE; CMOS;

D O I：

10.1109/LED.2008.2009011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report low-threshold-voltage (V-t) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degrees C. The gate-first and self-aligned TaN/HflLaO n-MOSFETs using Ni/Sb SPID-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm(2)/V . s at a small 1.3-nm equivalent oxide thickness.

引用

页码：75 / 77

页数：3

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