Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

This work finds a significant difference in degradation under hot carrier stress (HCS) due to additional hole injection in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric. A comparison performed on degradation of input/output (I/O) and standard performance (SP) devices showed that performance degradation of the I/O device is worse than the SP device under HCS. For the SP device, both channel-electrons and hot holes can inject into gate dielectric, in which hole acts to diminish the stress field. However, I/O device shows only electron injection. The proposed model is confirmed by gate induced drain leakage current and simulation tool. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791676]