Growth and characterization of GaN thin films on β-SiC/Si substrate using rapid thermal chemical vapor deposition

GaN films were grown on beta-SiC/Si and the structural and optical properties of the GaN were examined with XRD and PL measurements. GaN was grown on SiC films which were deposited an Si at temperatures of 900 similar to 1000 degrees C, but no growth occurred on SiC films deposited at temperatures of 500 similar to 800 degrees C and 1100 degrees C. The structural and optical properties of the GaN significantly varied depending on the growth condition of SiC on Si. A deep level yellow emission was observed at 2.23 eV of PL spectra for GaN films grown predominantly along (10 (1) over bar 0) orientation, while near band edge blue emission at X4 eV from GaN films grown along the c-plane. GaN film grown on beta-SiC/Si substrate at the best condition produced a strong UV emission with FWHM of 152 meV at room temperature and suppressed completely the deep level yellow emission. XRD spectrum for the GaN exhibited the growth of highly oriented wurtzite GaN with FWHM of similar to 424 arcsec.