Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes

被引：6

作者：

Lim, Myung-Hoon ^{[1
]}

Lee, In-Yeal ^{[1
]}

Jeong, Seong-Guk ^{[1
]}

Lee, Jongtaek ^{[1
]}

Jung, Woo-Shik ^{[2
]}

Yu, Hyun-Yong ^{[3
]}

Kim, Gil-Ho ^{[1
]}

Roh, Yonghan ^{[1
]}

Park, Jin-Hong ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

ORGANIC ELECTRONICS | 2012年 / 13卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Asymmetric S/D; Pentacene; OTFT; FIELD-EFFECT TRANSISTORS; CONTACT;

D O I：

10.1016/j.orgel.2012.03.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1056 / 1059

页数：4

共 9 条

[1] Energy-Level Alignment at Organic/Metal and Organic/Organic Interfaces [J].

Braun, Slawomir ;

Salaneck, William R. ;

Fahlman, Mats .

ADVANCED MATERIALS, 2009, 21 (14-15) :1450-1472

[2]

Haick H., 2007, J MAT CHEM C, V101, P2318

[3] Organic thin-film transistors on a plastic substrate with anodically oxidized high-dielectric-constant insulators [J].

Iino, Y ;

Inoue, Y ;

Fujisaki, Y ;

Fujikake, H ;

Sato, H ;

Kawakita, M ;

Tokito, S ;

Kikuchi, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (01) :299-304

[4] Flexible organic complementary circuits [J].

Klauk, H ;

Halik, M ;

Zschieschang, U ;

Eder, F ;

Rohde, D ;

Schmid, G ;

Dehm, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (04) :618-622

[5] Enhanced Charge Injection in Pentacene Field-Effect Transistors with Graphene Electrodes [J].

Lee, Sangchul ;

Jo, Gunho ;

Kang, Seok-Ju ;

Wang, Gunuk ;

Choe, Minhyeok ;

Park, Woojin ;

Kim, Dong-Yu ;

Kahng, Yung Ho ;

Lee, Takhee .

ADVANCED MATERIALS, 2011, 23 (01) :100-+

[6] Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface [J].

Liu, Zihong ;

Kobayashi, Masaharu ;

Paul, Bipul C. ;

Bao, Zhenan ;

Nishi, Yoshio .

PHYSICAL REVIEW B, 2010, 82 (03)

[7] Identification of optimal combinations for empirical dual antimicrobial therapy of pseudomonas aeruginosa infection: Potential role of a combination antibiogram [J].

Mizuta, Mari ;

Linkin, Darren R. ;

Nachamkin, Irving ;

Fishman, Neil O. ;

Weiner, Mark G. ;

Sheridan, Angela ;

Lautenbach, Ebbing .

INFECTION CONTROL AND HOSPITAL EPIDEMIOLOGY, 2006, 27 (04) :413-415

[8] Metal-semiconductor contact in organic thin film transistors [J].

Rhee, Shi-Woo ;

Yun, Dong-Jin .

JOURNAL OF MATERIALS CHEMISTRY, 2008, 18 (45) :5437-5444

[9] Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes [J].

Yuan, JF ;

Zhang, J ;

Wang, J ;

Yan, XJ ;

Yan, DH ;

Xu, W .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3967-3969

← 1 →