Properties of MgB2 films grown at various temperatures by hybrid physical-chemical vapour deposition

被引：8

作者：

Chen, Ke ^{[1
]}

Veldhorst, Menno ^{[1
,2
,3
]}

Lee, Che-Hui ^{[4
]}

Lamborn, Daniel R. ^{[4
]}

DeFrain, Raymond ^{[4
]}

Redwing, Joan M. ^{[4
]}

Li, Qi ^{[1
]}

Xi, X. X. ^{[1
,4
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[3] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2008年 / 21卷 / 09期

关键词：

D O I：

10.1088/0953-2048/21/9/095015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 degrees C with a T-c0 of 35.5 K. MgB2 films up to 4 mu m in thickness grown at 550 degrees C have J(c) over 10(6) A cm(-2) at 5 K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors.

引用

页数：5

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