A Multiband RF Antenna Duplexer on CMOS: Design and Performance

被引：77
作者：
Mikhemar, Mohyee [1 ,2 ]
Darabi, Hooman [2 ]
Abidi, Asad A. [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Broadcom Corp, Irvine, CA 92617 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2013年 / 48卷 / 09期
关键词：
Antenna tuning unit; autotransformer; balancing network; bridge network; CMOS; diplexer; duplexer; electrical balance; FDD; full-duplex; hybrid transformer; isolation; noise matching; reciprocal circuit; transmitter leakage; 3G; POWER-AMPLIFIER;
D O I：
10.1109/JSSC.2013.2264626
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An RF duplexer has been fabricated on a CMOS IC for use in 3G/4G cellular transceivers. The passive circuit sustains large voltage swings in the transmit path, and isolates the receive path from the transmitter by more than 45 dB across a bandwidth of 200 MHz in 3G/4G bands I, II, III, IV, and IX. A low noise amplifier embedded into the duplexer demonstrates a cascade noise figure of 5 dB with more than 27 dB of gain. The duplexer inserts 2.5 dB of loss between power amplifier and antenna.
引用
收藏
页码：2067 / 2077
页数：11
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