Theoretical model of superconducting spintronic SIsFS devices

被引：61

作者：

Bakurskiy, S. V. ^{[1
,2
]}

Klenov, N. V. ^{[1
,2
]}

Soloviev, I. I. ^{[1
]}

Bol'ginov, V. V. ^{[3
]}

Ryazanov, V. V. ^{[3
]}

Vernik, I. V. ^{[4
]}

Mukhanov, O. A. ^{[4
]}

Kupriyanov, M. Yu. ^{[1
]}

Golubov, A. A. ^{[5
,6
]}

机构：

[1] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys MSU SINP, Moscow 119991, Russia

[2] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119992, Russia

[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[4] HYPRES Inc, Elmsford, NY 10523 USA

[5] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[6] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期

基金：

俄罗斯基础研究基金会;

关键词：

FERROMAGNET STRUCTURES; JOSEPHSON STRUCTURES; JUNCTIONS; FIELD;

D O I：

10.1063/1.4805032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Motivated by recent progress in the development of cryogenic memory compatible with single flux quantum (SFQ) circuits, we have performed a theoretical study of magnetic SIsFS Josephson junctions, where "S" is a bulk superconductor, "s" is a thin superconducting film, "F" is a metallic ferromagnet, and "I" is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature, and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current I-C and a normal-state resistance R-N in the pi state, comparable to that in superconductor-insulator-superconductor tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlOx-Nb-Pd0.99Fe0.01-Nb junctions. (C) 2013 AIP Publishing LLC.

引用

页数：4

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