InP hot electron transistors with emitter mesa fabricated between gate electrodes for reduction in emitter-gate gate-leakage current

We proposed and fabricated a hot electron transistor in which an electron propagates only through an intrinsic semiconductor. In this transistor, an emitter mesa was fabricated between gate electrodes to reduce the gate leakage current from the emitter to the gate. To suppress the current leakage from the emitter and the gate pads, free-standing tungsten wires were also fabricated. The measured I-V characteristics at 20 K showed effective control of collector current by gate bias. When the device was operated, it was confirmed that the gate-leakage current from the emitter to the gate was smaller than the collector current. The calculated transconductance g(m) was approximately 10 mS/mm.