Spin-polarized transport in hybrid (Zn,Cr)Te/Al2O3/Co magnetic tunnel junctions

被引：24

作者：

Wang, W. G. ^{[1
]}

Ni, C.

Moriyama, T.

Wan, J.

Nowak, E.

Xiao, John Q.

机构：

[1] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA

[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 20期

关键词：

D O I：

10.1063/1.2205177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.

引用

页数：3

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