Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

被引：1

作者：

Tang, C. K. ^{[1
]}

Vines, L. ^{[1
]}

Svensson, B. G. ^{[1
]}

Monakhov, E. V. ^{[1
]}

机构：

[1] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11 | 2012年 / 9卷 / 10-11期

关键词：

silicon; iron; hydrogen; irradiation; defect DLTS; HYDROGEN INTERACTION; IMPLANTED SILICON; IRON; COMPLEXES; DEFECTS;

D O I：

10.1002/pssc.201200163

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Proton-irradiation has been realized on Fe-contaminated p-type Czochralski silicon and investigated for interaction between Fe and irradiation-induced defects using deep level transient spectroscopy. From isochronal thermal annealings, three distinctive Fe-related defects are observed with energy level position of 0.17, 0.28 and 0.34 eV above the valence band edge. From the evolution of the defect concentration at different annealing temperature, it is suggested that Fe has reacted with prominent irradiation-induced defects, such as the vacancy-oxygen complex and the divacancy center. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1992 / 1995

页数：4

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