Triple-Junction GaInP/GaAs/Ge Solar Cells With an AZO Transparent Electrode and ZnO Nanowires

被引：8

作者：

Chang, Shoou-Jinn ^{[1
,2
]}

Hou, Jei-Li ^{[1
,2
]}

Hsueh, Ting-Jen ^{[3
]}

Lam, Kin-Tak ^{[4
]}

Li, Shuguang ^{[5
]}

Liu, Chun-Hsing ^{[6
]}

Chang, Sheng-Po ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Res Ctr Energy Technol & Strategy, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Res Ctr Energy Technol & Strategy, Tainan 70101, Taiwan

[3] Southern Taiwan Sci Pk, Natl Nano Device Labs, Tainan 741, Taiwan

[4] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China

[5] China Univ Petr East China, Coll Sci, Qingdao 266555, Shandong, Peoples R China

[6] Nan Jeon Inst Technol, Dept Elect Engn, Tainan 73746, Taiwan

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2013年 / 3卷 / 03期

关键词：

Al-doped ZnO (AZO); ZnO nanowires; triple-junction solar cell; OHMIC CONTACTS; BROAD-BAND;

D O I：

10.1109/JPHOTOV.2013.2258192

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller reflectance, as compared with AZO and MgF2/Ta2O5. By inserting a 4-nm-thick AuGeNi between AZO and n(+)-AlInP, it was found that the rectifying contact could be transformed into an ohmic contact with a specific contact resistance of 1.02 x 10(-5) Omega.cm(2). Furthermore, it was found that the ZnONWs/ZnO used in this study could enhance the conversion efficiency of TJ solar cells from 21.91% to 28.16%, which corresponds to a 25.4% relative enhancement in the conversion efficiency.

引用

页码：991 / 996

页数：6

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