n-ZnO/p-Si Photodiodes with Improved Photoresponsivities and Acceptance Angles for Solar Applications

被引：0

作者：

Chen, Cheng-Pin ^{[1
]}

Lin, Pei-Hsuan ^{[1
]}

Chen, Liang-Yi ^{[1
]}

Ke, Min-Yung ^{[1
]}

Cheng, Yun-Wei ^{[1
]}

Huang, JianJang ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

来源：

PHOTOVOLTAICS FOR THE 21ST CENTURY 5 | 2010年 / 25卷 / 15期

关键词：

ELECTRODES; SILICON; DIODES; FILMS;

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We fabricated the n-ZnO/p-Si photodiode and discuss the potential for solar application. By applying the nanostructure of silica nanoparticles above the n-ZnO layer, we observed the enhancement of photoresponsivity and acceptance angle at the wavelength between 400 and 650 nm. The enhancement of photoresponsivity over the conventional device was achieved 17.6% and is due to the improved optical transmission toward the semiconductor through the silica nanoparticles. Furthermore, dramatically increasing of acceptance angle of the nanoparticle coated device was observed, which is attributed to the effect of Bragg diffraction.

引用

页码：25 / 31

页数：7

共 13 条

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