Sensing properties of Pt/Pd activated tungsten oxide films grown by simultaneous radio-frequency sputtering to reducing gases

被引：26

作者：

Zhang, Chao ^{[1
]}

Boudiba, Abdelhamid ^{[1
]}

Olivier, Marie-Georges ^{[1
,3
]}

Snyders, Rony ^{[2
,3
]}

Debliquy, Marc ^{[1
]}

机构：

[1] Univ Mons, Fac Polytech, Serv Sci Mat, B-7000 Mons, Belgium

[2] Univ Mons, Lab Plasma Surface Interact Chem, B-7000 Mons, Belgium

[3] Mat Nova Res Ctr, Mons, Belgium

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2012年 / 175卷

关键词：

Gas sensor; Sputtering; Platinum; Palladium; Tungsten oxide; THIN-FILMS; ELECTRICAL-PROPERTIES; PD; SENSORS; HYDROGEN; AU; SENSITIVITY; PERFORMANCE; SELECTIVITY; H-2;

D O I：

10.1016/j.snb.2011.11.060

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

1 at% platinum activated tungsten oxide (Pt-WO3) and 1 at% palladium activated WO3 (Pd-WO3) films were grown on Al2O3 substrates by a simultaneous radio-frequency sputtering process. The as-sputtered films were thermally treated at 450 degrees C for 24h. Phase structure and chemical composition of the as-sputtered and thermally treated films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Sensing characteristics of the Pt-WO3 and Pd-WO3 films, as well as a pure WO3 film, were characterized with 25-200 ppm H-2, 25-200 ppm CO and 0.62-5 ppm NH3 at various working temperatures and relative humidity of target gases. Effects of Pt and Pd on sensing characteristics of the sensors were compared and studied. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：53 / 59

页数：7

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