Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz

被引：3

作者：

Cheng Wei ^{[1
]}

Jin Zhi ^{[1
]}

Su Yong-Bo ^{[1
]}

Liu Xin-Yu ^{[1
]}

Xu An-Huai ^{[2
]}

Qi Ming ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 03期

关键词：

HIGH-BREAKDOWN-VOLTAGE; DHBT TECHNOLOGY; F(MAX);

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

To eliminate the conduction band spike at the base-collector interface, an InP/InGaAs double heterostructure bipolar transistor (DHBT) with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure. The DHBT with emitter area of 1.6 x 15 mu m(2) exhibits current-gain cutoff frequency f(t) = 242 GHz at the high collector current density J(C) = 2.1 mA/mu m(2), which is to our knowledge the highest f(t) reported for the mesa InP DHBT in China. The breakdown voltage in common-emitter configuration is more than 5 V. The high-speed InP/InGaAs DHBT with high current density is very suitable for the application in ultra high-speed digital circuits.

引用

页数：4

共 13 条

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