Investigation of Phonon Deformation Potentials in Si1-xGex by Oil-Immersion Raman Spectroscopy

被引：18

作者：

Kosemura, Daisuke ^{[1
]}

Usuda, Koji ^{[2
]}

Ogura, Atsushi ^{[1
]}

机构：

[1] Meiji Univ, Sch Sci & Technol, Kawasaki, Kanagawa 2148571, Japan

[2] AIST, Collaborat Res Team Green Nanoelect Ctr, Tsukuba, Ibaraki 3058569, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 11期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

STRAIN; STRESS; SI; SILICON; GE;

D O I：

10.1143/APEX.5.111301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phonon deformation potentials (PDPs) in Si1-xGex were investigated by oil-immersion Raman spectroscopy. Transverse optical (TO) and longitudinal optical (LO) phonon modes were separately excited for strained Si1-xGex as well as strained Si. PDPs p and q were derived with the use of the Raman wavenumber shifts of TO and LO. The obtained PDPs for Si, SiGe0.153, and SiGe0.297 were compared with one another. Furthermore, the strain-shift coefficient was also obtained and compared with the previously reported values. The p and q values allow us to precisely evaluate anisotropic biaxial stress states in Si and Si1-xGex by oil-immersion Raman spectroscopy. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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